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 SL02 / 03 / 04
Vishay Semiconductors
Small Signal Schottky Diodes
Features
For surface mounted applications Low-profile package e3 Ideal for automated placement Low power loss, high efficiency High temperature soldering: 260 C/10 seconds at terminals * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * * * * *
17249
Mechanical Data
Case: JEDEC DO-219AB (SMF) Plastic case Polarity: Color band denotes cathode end Weight: approx. 15 mg Packaging codes-options: G18 / 10 k per 13" reel (8 mm tape), 50 k/box G08 / 3 k per 7" reel (8 mm tape), 30 k/box
Parts Table
Part SL02 SL03 SL04 Ordering code SL02-GS18 or SL02-GS08 SL03-GS18 or SL03-GS08 SL04-GS18 or SL04-GS08 S2 S3 S4 Marking Remarks Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Test condition Part SL02 SL03 SL04 Maximum RMS voltage SL02 SL03 SL04 Symbol VRRM VRRM VRRM VRMS VRMS VRMS Value 20 30 40 14 21 28 Unit V V V V V V
Document Number 85687 Rev. 1.6, 13-Apr-05
www.vishay.com 1
SL02 / 03 / 04
Vishay Semiconductors
Parameter Maximum DC blocking voltage Test condition Part SL02 SL03 SL04 Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave Ttp = 109 C Symbol VDC VDC VDC IF(AV) IFSM Value 20 30 40 1.1 40 Unit V V V A A
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air2) Maximum operating junction temperature Storage temperature range
2)
Test condition
Symbol RthJA TJ TSTG
Value 180 125 - 55 to 150
Unit K/W C C
Mounted on epoxy substrate with 3 x 3 mm Cu pads ( 40 m thick)
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Instaneous forward voltage at 0.51) SL03 SL04 Typical instantaneous forward voltage 1.1 A SL02 SL03 SL04 Maximum DC reverse current at TA = 25 C rated DC blocking voltage TA = 100 C TA = 25 C TA = 100 C TA = 25 C TA = 100 C
1)
Test condition
Part SL02
Symbol VF VF VF VF VF VF IR IR IR IR IR IR
Min
Typ. 0.360 0.395 0.450 0.420 0.450 0.530
Max 0.385 0.43 0.51
Unit V V V V V V
SL02 SL02 SL03 SL03 SL04 SL04
250 8.0 130 6.0 20 6.0
A mA A mA A mA
Pulse test: 300 s pulse width, 1 % duty cycle
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Document Number 85687 Rev. 1.6, 13-Apr-05
SL02 / 03 / 04
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.5 10000
Instantaneous Reverse Current (A)
TJ = 100C
1000
Average Forward Current (A)
TJ = 75C TJ = 50C
1.0
100
TJ = 25C
0.5
10
0
17379
1 0 5 10 15 20 25
0
10
30
50
70
90
110
130
150
Lead temperature (C)
17382
Reverse Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Current Characteristics - SL02
Instantaneous Forward Current (A)
250
10
Junction Capacitance (pF)
200
1
TJ = 100C TJ = 75C
150
0.1
TJ = 50C
0.01
100
SL02
50
TJ = 25C
0.001 Pulse Width = 300s 1% Duty Cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
SL04
10
17380
0.0001 0 2 4 6 8 10 12
17383
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 2. Typical Junction Capacitance
Figure 5. Typical Instantaneous Forward Characteristics - SL03
Instantaneous Forward Current (A)
10
10000
TJ = 100C
1
Instantaneous Reverse Current ( A)
TJ = 100C TJ = 75C
100
1000
TJ = 75C
0.1
TJ = 50C
TJ = 50C
0.01
10
TJ = 25C
TJ = 25C
0.001 Pulse Width = 300s 1% Duty Cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
0.0001
17381
0.1 0
17384
5
10
15
20
25
30
35
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characterisics - SL02
Figure 6. Typical Reverse Current Characteristics - SL03
Document Number 85687 Rev. 1.6, 13-Apr-05
www.vishay.com 3
SL02 / 03 / 04
Vishay Semiconductors Package Dimensions in mm (Inches)
0.85 (0.033) 0.35 (0.014)
3.9 (0.152) 3.5 (0.137) 5
0.99 (0.039) 0.97 (0.038)
0.16 (0.006)
5
Z
Detail Z enlarged
Cathode Band Top View
1.9 (0.074) 1.7 (0.066) 0.10 max
1.2 (0.047) 0.8 (0.031)
2.9 (0.113) 2.7 (0.105) ISO Method E
Mounting Pad Layout
1.6 (0.062) 1.3 (0.051)
1.4 (0.055)
17247
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Document Number 85687 Rev. 1.6, 13-Apr-05
SL02 / 03 / 04
Vishay Semiconductors Blistertape for SMF
PS
18513
Document Number 85687 Rev. 1.6, 13-Apr-05
www.vishay.com 5
SL02 / 03 / 04
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85687 Rev. 1.6, 13-Apr-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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